inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon npn power transistors 2n6338/6339/6340/6341 description collector-emitter sustaining voltage- : v ceo(sus) = 100v(min)- 2n6338 = 120v(min)- 2n6339 = 140v(min)- 2N6340 = 160v(min)- 2n6341 high switching speed low saturation voltage- : v ce( sat )= 1.0v(max)@ i c = 10a applications designed for use in industrial-military power amplifier and switching circuit applications. absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 0.875 /w symbol parameter value unit 2n 6338 120 2n 6339 140 2n 6340 160 v cbo collector-base voltage 2n 6341 180 v 2n 6338 100 2n 6339 120 2n 6340 140 v ceo collector-emitter voltage 2n 6341 150 v v ebo emitter-base voltage 7 v i c collector current-continuous 25 a i cm collector current-peak 50 a i b b ase current-continuous 10 a p c collector power dissipation @t c =25 200 w t j junction temperature 200 t stg storage temperature -65~200
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistors 2n6338/6339/6340/6341 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit 2n6338 100 2n6339 120 2N6340 140 v ceo(sus) collector-emitter sustaining voltage 2n6341 i c = 50ma ; i b = 0 150 v v ce (sat) -1 collector-emitter saturation voltage i c = 10a; i b = 1a 1.0 v v ce (sat) -2 collector-emitter saturation voltage i c = 25a; i b = 2.5a 1.8 v v be (sat) -1 base-emitter saturation voltage i c = 10a; i b = 1a 1.8 v v be (sat) -2 base-emitter saturation voltage i c = 25a; i b = 2.5a 2.5 v v be( on ) base-emitter on voltage i c = 10a ; v ce = 2v 1.8 v 2n6338 v ce = 50v; i b = 0 50 2n6339 v ce = 60v; i b = 0 50 2N6340 v ce = 70v; i b = 0 50 i ceo collector cutoff current 2n6341 v ce = 75v; i b = 0 50 a i cbo collector cutoff current v cb = ratedv cbo ; i e = 0 10 a i cex collector cutoff current v ce = ratedv ceo ;v be( off ) = 1.5v v ce = ratedv ceo ;v be( off ) = 1.5v,t c =150 10 1.0 a ma i ebo emitter cutoff current v eb = 6v; i c =0 0.1 ma h fe-1 dc current gain i c = 0.5a ; v ce = 2v 50 h fe-2 dc current gain i c = 10a ; v ce = 2v 30 120 h fe-3 dc current gain i c = 25a ; v ce = 2v 12 f t current-gain bandwidth product i c = 1a ; v ce = 10v ;f test = 10mhz 40 mhz c ob output capacitance i e = 0 ; v cb = 10v ;f test = 0.1mhz 300 pf switching times t r rise time v cc = 80v; i c = 10a;i b1 = 1a, v be( off ) = 6v 0.3 s t stg storage time 1.0 s t f fall time v cc = 80v; i c = 10a; i b1 = -i b2 = 1a, 0.25 s
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